Genuine power frequency QLN (10 ~ 200KV) / 5A special multi-level high-voltage rectifier bridge HVDIODE manufacturers

Item No.: GD011
The main features of this series of products: 1. Low re verse leakage current and transient 10mS forward surge current protection; 2. Shock voltage resistance and avalanche voltage breakdown protection characteristics; 3. Excellent continuous discharge ch
Description
This series of products are widely used in:
Medical equipment, electrostatic dedusting, spray coating, high frequency heat sealing, bentwood drying, oil dehydration and desalination, high pressure detection, plasma injection, ion accelerator, electron beam welding, electron microscopy, negative ion ozone generator, air purification, vacuum coating , Ultrasonic cleaning, high-energy ignition, X-ray machine inspection, DR medical imaging, industrial microwave, radar modulation, broadcast wireless transmitter, laser cutting and welding equipment and other DC power supplies, pulse power supplies and other electronic equipment. Product marketing nationwide and worldwide!
 

Limit value

Absolute

Maximum

Ratings

  parameter name
Item
symbol
Symbol
unit
Unit
Test Conditions
Conditions
Value
Voltage
Repetitive Peak Backward Voltage
Repetitive Peak Backward Voltage
Vrrm KV Ta = 25 ℃ Ir = 0.1μA 2~ 500
Peak Working Backward Voltage
Peak Working Backward Voltage
Vrwm KV Ta = 25 ℃ Ir = 0.1μA 2 ~ 500
Forward average current
Average Forward Current
If (AV) A Sine half wave 50Hz, resistive load, Tbreak = 50 ℃
(50Hz Half-sine Wave, Resistance load @ Tbreak = 50 ℃)
6.0
Backward Recovery Time
Backward Recovery Time
Trr nS   -
Forward (non-repetitive) inrush current
Surge Forward Current
Ifsm A Sine half wave duration 0.01S 50Hz
0.01S @ Half-Sine wave 50Hz
200
Working temperature
Operating Ambient Temperature
Ta   -40 ~ + 150
Storage temperature
Storage Temperature
Tstg   -40 ~ + 120

Electrical characteristics

Electrical

Characteristics

Forward peak voltage
Forward Peak Voltage
Vfm V   ≥2.4 ~ 600
Backward Peak Current
Backward Peak Current
Irrm1 μA @ Ta = 25 ℃ VRM = VRRM 10.0
Irrm2 μA @ Ta = 25 ℃ VRM = VRRM 100.0