• HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS

HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A 70nS

Product main features:
1. Axial leaded connection.
2. High thermal conductivity epoxy compound molding.
3. Excellent surge current resistance.
4. Fast reverse recovery time for high efficiency.
5. Special high temperature glass passivation technology.
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  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
  • HVSU-101 Ultra Fast Recovery High-Voltage Diode 10KV 1A  70nS
Desciption
 HVSU-101 Ultra Fast Recovery High-Voltage Diode   Data Sheet 
 Parameter Symbol Unit Test Conditions Value
 Repetitive Peak Backward Voltage Vrrm KV Ta=25℃  Ir=1.0μA 10.0
 Peak Working Backward Voltage Vrwm KV Ta=25℃  Ir=1.0μA 10.0
 Average Forward Current If(AV) A 50Hz Half-sine Wave , Resistance load @Tbreak=50℃ 1.0
 Backward Recovery Time Trr nS   70
 Surge Forward Current Ifsm A 0.01S @ Half-Sine wave  50Hz 40
 Operating Ambient Temperature Ta   -55~+175
 Storage Temperature Tstg   -55~+150
 Forward Peak Voltage Vfm V   ≥11.0
 Backward Peak  Current Irrm1 μA @ Ta=25℃ VRM=VRRM 1.0
Irrm2 μA @ Ta=100℃ VRM=VRRM 20.0
 Absolute Maximum Ratings & Electrical Characteristics
HVDIODE - Suly Electronics Co., Ltd.
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