Low frequency HVRM12 high voltage diode 12KV1.5A glass blunt chip HVDIODE genuine

Item No.: DP0043
Main features of this series of products:
1. Low backward leakage current, transient 10ms forward surge current protection;
2. Impulse voltage resistance, avalanche voltage breakdown protection
3. Excellent continuous discharge characteristics;
4. Hig
Description
The series of our products are widely used in:
Medical equipment, electrostatic precipitator,electrostatic powder coating and spray ,High frequency heat sealing, curved wood dryer, oil dehydration and desalination, high-voltage detection, plasma injection, ion accelerator, electron beam welding, electron microscopy, negative ion ozone generator, air purification, vacuum coating, ultrasonic cleaning, high-energy ignition, X-ray machine flaw detection, Dr medical imaging, industrial microwave, radar modulation, radio and wireless emission machine, laser cutting and welding equipment and other DC power, pulse power and other electronic equipments. Our products enjoy a great reputation in domestic and foreign market!

Main features of this series of products:
1. Low backward leakage current, transient 10ms forward surge current protection;
2. Impulse voltage resistance, avalanche voltage breakdown protection;
3. Excellent continuous discharge characteristics;
4. High temperature resistance ,PN junction is 125 ℃ ~ 175 ℃;
5. Optional advanced high temperature glass glass-passivated chip packaging technology;
6. Environmental protection process,which are in accord with international standards;
7. Perform according to the ISO9001 international quality management system strictly;
8. The new molding packaging technology ensures the product's moisture resistance and withstand severe and harsh use environment;
9. Customized designs are available by clients' requirements.

 

 

Absolute

Maximum

Ratings

  Item Symbol Unit Test Conditions Rating
Repetitive Peak Backward Voltage Vrrm KV Ta=25℃  Ir=2.0μA 12
Peak Working Backward Voltage Vrwm KV Ta=25℃  Ir=2.0μA 12
Average Forward Current If(AV) A 50Hz Half-sine Wave , Resistance load @Tbreak=50℃ 1.5
Backward Recovery Time Trr nS   --
Surge Forward Current Ifsm A 0.01S @ Half-Sine wave  50Hz 80
Operating Ambient Temperature Ta   -50~+175
Storage Temperature Tstg   -40~+120

 

Electrical

Characteristics

Forward Peak Voltage Vfm V   ≥11.2
Backward Peak  Current Irrm1 μA @ Ta=25℃ VRM=VRRM 2.0
Irrm2 μA @ Ta=100℃ VRM=VRRM 20.0